Sub-10 nm transparent all-around-gated ambipolar ionic field effect transistor

Sub-10 nm transparent all-around-gated ambipolar ionic field effect transistor.

In this paper, we developed a versatile ionic field effect transistor (IFET) which has an ambipolar function for manipulating molecules regardless of their polarity and can be operated at a wide range of electrolytic concentrations (10(-5) M-1 M). The IFET has circular nanochannels radially covered by gate electrodes, called "all-around-gate", with an aluminum oxide (Al2O3) oxide layer of a nea...

MoS2 Field-Effect Transistor with Sub-10 nm Channel Length.

Atomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large bandgap of MoS2 minimize direct source-drain tunneling, while its atomically thin body maximizes the gate modulation efficiency in ultrashort-channel transistors. However, no experimental study to date has approached...

Performance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor

In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...

Sub-15 nm gate-all-around field effect transistors on vertical silicon nanowires

Ambipolar transport in an electrochemically gated single-molecule field-effect transistor.

Charge transport is studied in single-molecule junctions formed with a 1,7-pyrrolidine-substituted 3,4,9,10-perylenetetracarboxylic diimide (PTCDI) molecular block using an electrochemical gate. Compared to an unsubstituted-PTCDI block, spectroscopic and electrochemical measurements indicate a reduction in the highest occupied (HOMO)-lowest unoccupied (LUMO) molecular orbital energy gap associa...